dielectric hysteresis loss电介质滞后损失;翻译
dielectric residual loss介质后效损耗
dielectric power loss介电功率损耗
Dielectric c loss介电损耗
Dielectric constant Loss tangent介电常数损耗因数
low dielectric-loss glass低介电损耗玻璃
dielectric-loss angle measurement介质损失角测量
low dielectric-loss glrear end低介电斲丧玻璃
The key to detect dielectric loss angle is correct extraction of the fundamental wave of voltage and current signal.
介质损耗角大小是判断高压设备绝缘状况的有效参数之一,而准确的提取基波电压和电流信号是检测介损角的关键。
It was discovered for the first time that the microwave sintering samples have lower dielectric loss comparing with conventional sintering samples, the result is significant for preparing the higher Signal-to-Noise pyroelectric sensor.5.
实验首次发现，微波烧结获得的细晶粒陶瓷的介电损耗远小于传统工艺制备的样品，这一特性对于制备低噪声、高探测率的热释电材料具有重要的应用价值。
参考来源 - 不同试验方法对CVT介损测试结果的影响The bulk density of this material is 2.71 g/cm3, the bending strength is 120MPa, the dielectric constant and the dielectric loss at 1MHz are 8.6 and 1.27×10-3 respectivly.
烧结试样的体积密度为2.71g/cm3,抗弯强度为120MPa;在1MHz的测试频率下,其介电常数为8.6,介电损耗为1.27×10-3。
参考来源 - CBS/AlThe dielectric of the films was 20~30 (10~20kHz), the dielectric loss tangent was 0.001(20kHz).
测试得出薄膜的介电常数为20~30之间(10~20kHz)，介质损耗因数为0.001(20kHz)。
Au/BZN/Au structure capacitor was prepared, Influence of the different compositon, electrode, annealing processes(CFA,RTA) on the dielectric properties was discussed, the dielectric loss tangents of the film is 0.002—0.004, and the tunability of the dielectric constant is about 20%.3.
实验得到可调率约20%,损耗0.002—0.004的BZN薄膜。 3.研究了BZN薄膜电容器在不同频率下的介电性能。
参考来源 - 铌酸锌铋BZN薄膜的制备和介电可调性能研究